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Home/    Category/    FET, MOSFET/    FDS6900AS-G

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC FDS6900AS-G

FDS6900AS-G image
The pictures are for reference only
Brand:
ON
Model:
FDS6900AS-G
Description:
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Stock:
16522
Type:
goods in stock
Store:
Hong kong
ECAD Model:
Condition : NEW
Availability : ln Stock
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    6.9A,8.2A
  • Drain source voltage (Vdss)
    30V
  • FET Type
    2 N-channels(two)
  • FET function
    Logic level gate
  • Gate charge (Qg) at different Vgs (maximum)
    15nC @ 10V
  • Input capacitance at different Vds (Ciss) (maximum)
    600pF @ 15V
  • On resistance (maximum) for different Ids and Vgs
    27 mΩ @ 6.9A,10V
  • Power - maximum
    900mW(Ta)
  • Vgs (th) (maximum) for different Ids
    3V @ 250µA,3V @ 1mA
  • packing
    TR
  • series
    PowerTrench®, SyncFET™
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-SOIC(0.154,3.90mm wide)
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
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